N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 onsemi IRL640A

RS Stock No.:: 807-8711
Mfr. Part No.:: IRL640A
Brand:: onsemi

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220 onsemi IRL640A

This image is representative of the product range

340 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 5)

Was $2.47

You pay

$2.002

(exc. GST)

$2.202

(inc. GST)

Units	Per unit	Per Pack*
5 - 10	$2.002	$10.01
15 - 70	$1.968	$9.84
75 +	$1.62	$8.10

*price indicative

RS Stock No.:: 807-8711
Mfr. Part No.:: IRL640A
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	180 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	110 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Width	4.7mm
Typical Gate Charge @ Vgs	40 nC @ 5 V
Length	10.67mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	16.3mm