Dual N/P-Channel-Channel MOSFET, 4.5 A, 6.4 A, 30 V, 8-Pin SOIC onsemi FDS8958B

RS Stock No.:: 806-3674
Mfr. Part No.:: FDS8958B
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 4.5 A, 6.4 A, 30 V, 8-Pin SOIC onsemi FDS8958B

This image is representative of the product range

30 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (In a Pack of 10)

$1.222

(exc. GST)

$1.344

(inc. GST)

Units	Per unit	Per Pack*
10 - 620	$1.222	$12.22
630 - 1240	$1.209	$12.09
1250 +	$1.172	$11.72

*price indicative

RS Stock No.:: 806-3674
Mfr. Part No.:: FDS8958B
Brand:: onsemi

Technical data sheets

Legislation and Compliance

Product Details

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	4.5 A, 6.4 A
Maximum Drain Source Voltage	30 V
Series	PowerTrench
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	39 mΩ, 80 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	1.6 W, 2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-25 V, -20 V, +20 V, +25 V
Typical Gate Charge @ Vgs	14 nC @ 10 V, 8.3 nC @ 10 V
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Transistor Material	Si
Width	3.9mm
Length	4.9mm
Height	1.575mm
Minimum Operating Temperature	-55 °C