N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

RS Stock No.:: 801-1370
Mfr. Part No.:: IXFB82N60Q3
Brand:: IXYS

N-Channel MOSFET, 82 A, 600 V, 3-Pin PLUS264 IXYS IXFB82N60Q3

This image is representative of the product range

On back order for despatch 13/02/2025, delivery within 10 working days from despatch date.

Added

Price (ex. GST) Each

$65.69

(exc. GST)

$72.26

(inc. GST)

Units	Per unit
1 - 6	$65.69
7 - 12	$65.38
13 +	$64.78

RS Stock No.:: 801-1370
Mfr. Part No.:: IXFB82N60Q3
Brand:: IXYS

Technical data sheets

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	82 A
Maximum Drain Source Voltage	600 V
Package Type	PLUS264
Series	HiperFET, Q3-Class
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	75 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	1.56 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	275 nC @ 10 V
Width	5.31mm
Length	20.29mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Height	26.59mm
Minimum Operating Temperature	-55 °C