Vishay TrenchFET Type N-Channel MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SISA10DN-T1-GE3

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Subtotal (1 pack of 10 units)*

$13.23

(exc. GST)

$14.55

(inc. GST)

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Units
Per unit
Per Pack*
10 - 740$1.323$13.23
750 +$1.318$13.18

*price indicative

Packaging Options:
RS Stock No.:
787-9409
Mfr. Part No.:
SISA10DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Power Dissipation Pd

39W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.12mm

Width

3.4 mm

Length

3.4mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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