P-Channel MOSFET, 4.4 A, 40 V, 3-Pin SOT-23 Vishay SI2319CDS-T1-GE3
- RS Stock No.:
- 787-9042
- Mfr. Part No.:
- SI2319CDS-T1-GE3
- Brand:
- Vishay
130 In AU stock for next working day delivery
90 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 10)
Was $0.73
You pay
$0.689
(exc. GST)
$0.758
(inc. GST)
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 740 | $0.689 | $6.89 |
| 750 - 1490 | $0.683 | $6.83 |
| 1500 + | $0.667 | $6.67 |
*price indicative
- RS Stock No.:
- 787-9042
- Mfr. Part No.:
- SI2319CDS-T1-GE3
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converter
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• DC/DC Converter
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 4.4 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 108 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 2.5 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 13.6 nC @ 10 V |
| Length | 3.04mm |
| Width | 1.4mm |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 1.02mm |
| Minimum Operating Temperature | -55 °C |
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