N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK Infineon IPD30N10S3L34ATMA1

RS Stock No.:: 753-3018P
Mfr. Part No.:: IPD30N10S3L34ATMA1
Brand:: Infineon

N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK Infineon IPD30N10S3L34ATMA1

This image is representative of the product range

97220 In Global stock for delivery within 10 working day(s)

Price (ex. GST) Each (Supplied on a Reel) Quantities below 150 on continuous strip

$1.73

(exc. GST)

$1.90

(inc. GST)

Units	Per unit
630 - 1240	$1.73
1250 +	$1.708

RS Stock No.:: 753-3018P
Mfr. Part No.:: IPD30N10S3L34ATMA1
Brand:: Infineon

IPD30N10S3L-34, OptiMOS-T Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	100 V
Series	OptiMOS™-T
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	42 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.4V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	57 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	24 nC @ 10 V
Transistor Material	Si
Width	6.22mm
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	6.5mm
Minimum Operating Temperature	-55 °C
Height	2.3mm

N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK Infineon IPD30N10S3L34ATMA1

Infineon OptiMOS™T Power MOSFETs