Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89
- RS Stock No.:
- 753-2848P
- Mfr. Part No.:
- BSS192PH6327FTSA1
- Brand:
- Infineon
This image is representative of the product range
Add 500 more to save 1%
View bulk pricing optionsSubtotal 250 units (supplied on a reel)*
$251.50
(exc. GST)
$276.75
(inc. GST)
FREE delivery for orders over $80.00 ex GST
- 760 unit(s) ready to ship from another location
Units | Per unit | Saving |
|---|---|---|
| 250 - 490 | $1.006 | - |
| 500 + | $0.992 | 1% |
*price indicative
- RS Stock No.:
- 753-2848P
- Mfr. Part No.:
- BSS192PH6327FTSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-89 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.5mm | |
| Width | 2.5mm | |
| Standards/Approvals | No | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-89 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Operating Temperature 150°C | ||
Length 4.5mm | ||
Width 2.5mm | ||
Standards/Approvals No | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 250V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS192PH6327FTSA1
Features and Benefits:
• 190mA continuous drain current supports low‑current load control
• 20Ω maximum Rds reduces conduction loss in low‑current circuits
• 4.9nC typical gate charge at Vgs ensures predictable switching behaviour
• 20V gate‑source limit allows straightforward gate drive designs
• 1W maximum power dissipation manages thermal constraints in compact layouts
Applications
• Ideal for low‑power reverse polarity protection circuits
• Used with high‑voltage battery management subsystems
• Can be used for small relay replacement in control modules
• Appropriate for surface‑mount power distribution on compact boards
