N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STMicroelectronics STD25NF10T4
- RS Stock No.:
- 687-5061P
- Mfr. Part No.:
- STD25NF10T4
- Brand:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 25 units (supplied on a continuous strip)*
$50.80
(exc. GST)
$55.88
(inc. GST)
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Units | Per unit |
|---|---|
| 25 - 45 | $2.032 |
| 50 - 120 | $2.006 |
| 125 - 245 | $1.738 |
| 250 + | $1.718 |
*price indicative
- RS Stock No.:
- 687-5061P
- Mfr. Part No.:
- STD25NF10T4
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 38 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 6.6mm | |
| Width | 6.2mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Series | STripFET II | |
| Height | 2.4mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 38 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 6.6mm | ||
Width 6.2mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 55 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Series STripFET II | ||
Height 2.4mm | ||