2N7000 N-Channel MOSFET, 200 mA, 60 V, 3-Pin TO-92 ON Semiconductor

Technical data sheets
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 200 mA
Maximum Drain Source Voltage 60 V
Maximum Drain Source Resistance 5 Ω
Minimum Gate Threshold Voltage 0.8V
Maximum Gate Source Voltage -20 V, +20 V
Package Type TO-92
Mounting Type Through Hole
Transistor Configuration Single
Pin Count 3
Channel Mode Enhancement
Maximum Power Dissipation 400 mW
Transistor Material Si
Width 4.19mm
Maximum Operating Temperature +150 °C
Height 5.33mm
Length 5.2mm
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
11840 In stock for delivery within 5 working day(s)
Price (ex. GST) Each (In a Pack of 20)
$ 0.447
(exc. GST)
$ 0.492
(inc. GST)
units
Per unit
Per Pack*
20 - 20
$0.447
$8.94
40 - 80
$0.443
$8.86
100 - 180
$0.321
$6.42
200 - 380
$0.318
$6.36
400 +
$0.31
$6.20
*price indicative
Packaging Options:
Related Products
The Microchip Technology through-hole mount N-channel MOSFET is ...
Description:
The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has drain-source resistance of 5ohms at a gate-source voltage of 10V. It has continuous ...
Enhancement Mode Field Effect Transistors are produced using ...
Description:
Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
The Infineon SIPMOS® small Signal P- channel MOSFETs ...
Description:
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety ...
The Infineon SIPMOS® small Signal P- channel MOSFETs ...
Description:
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety ...