onsemi NDS331 Type N-Channel MOSFET, 1.3 A, 20 V Enhancement, 3-Pin SOT-23 NDS331N

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

$4.13

(exc. GST)

$4.545

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 195 unit(s) ready to ship from another location
  • Plus 9,680 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 745$0.826$4.13
750 - 3745$0.808$4.04
3750 +$0.664$3.32

*price indicative

Packaging Options:
RS Stock No.:
671-1078
Mfr. Part No.:
NDS331N
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

NDS331

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

160mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

3.5nC

Maximum Power Dissipation Pd

500mW

Maximum Gate Source Voltage Vgs

8 V

Maximum Operating Temperature

150°C

Length

2.92mm

Height

0.94mm

Width

1.4 mm

Standards/Approvals

No

Automotive Standard

No

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links