N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF

RS Stock No.:: 650-4277P
Mfr. Part No.:: IRFB4227PBF
Brand:: Infineon

N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF

Available for back order.

Price (ex. GST) Each (Supplied in a Tube)

$5.96

(exc. GST)

$6.56

(inc. GST)

Units	Per unit
13 - 24	$5.96
25 +	$5.85

RS Stock No.:: 650-4277P
Mfr. Part No.:: IRFB4227PBF
Brand:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	65 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Typical Gate Charge @ Vgs	70 nC @ 10 V
Number of Elements per Chip	1
Width	4.82mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.66mm
Minimum Operating Temperature	-40 °C
Height	9.02mm

N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB Infineon IRFB4227PBF

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