N-Channel MOSFET, 2.5 A, 500 V, 3-Pin TO-220AB Vishay IRF820PBF
- RS Stock No.:
- 543-0002
- Mfr. Part No.:
- IRF820PBF
- Brand:
- Vishay
61 In AU stock for next working day delivery
70 In Global stock for delivery within 5 working day(s)
Added
Price (ex. GST) Each
Was $2.10
You pay
$1.50
(exc. GST)
$1.65
(inc. GST)
| Units | Per unit |
| 1 - 12 | $1.50 |
| 13 - 24 | $1.47 |
| 25 + | $1.44 |
- RS Stock No.:
- 543-0002
- Mfr. Part No.:
- IRF820PBF
- Brand:
- Vishay
Technical data sheets
Legislation and Compliance
Product Details
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirements
Repetitive avalanche rated
Simple drive requirements
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.5 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-220AB |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 3 Ω |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 50 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 4.7mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 10.41mm |
| Height | 9.01mm |
| Minimum Operating Temperature | -55 °C |