Infineon HEXFET P-Channel MOSFET, 23 A, 100 V, 3-Pin TO-220AB IRF9540NPBF

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RS Stock No.:
541-1225
Distrelec Article No.:
303-41-310
Mfr. Part No.:
IRF9540NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

23 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

117 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Length

10.54mm

Typical Gate Charge @ Vgs

97 nC @ 10 V

Number of Elements per Chip

1

Width

4.69mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Height

8.77mm

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF


This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.

Features & Benefits


• Handles up to 23A continuous drain current for robust performance
• Maximum drain-source voltage of 100V for consistent operation
• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency
• Capable of power dissipation up to 140W for intensive applications
• Typical gate charge of 97 nC at 10V supports fast switching

Applications


• Employed in power management circuits for efficient energy conversion
• Used in motor control systems for accurate speed regulation
• Integrated into power supply circuits to improve operational reliability
• Utilised in various automation systems for effective control functions

What is the temperature range for optimal performance?


The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.

How does the gate threshold voltage affect operation?


The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.

What type of mounting is required for installation?


This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.

Can this MOSFET be used in high-frequency applications?


Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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