Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3
- RS Stock No.:
- 279-9981
- Mfr. Part No.:
- SISH103DN-T1-GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
$14.57
(exc. GST)
$16.03
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 5,950 unit(s) shipping from 04 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | $1.457 | $14.57 |
| 50 - 90 | $1.069 | $10.69 |
| 100 - 240 | $0.948 | $9.48 |
| 250 - 990 | $0.927 | $9.27 |
| 1000 + | $0.911 | $9.11 |
*price indicative
- RS Stock No.:
- 279-9981
- Mfr. Part No.:
- SISH103DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 54A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | 1212-8 | |
| Series | SISH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0089Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 41.6W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 54A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type 1212-8 | ||
Series SISH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0089Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 41.6W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.
TrenchFET power MOSFET
100 percent Rg and UIS tested
Fully lead (Pb)-free device
Related links
- Vishay SISH Type P-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3
- Vishay SISH Type P-Channel MOSFET 30 V Enhancement, 8-Pin 1212-8 SISH107DN-T1-GE3
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual
- Vishay Type P-Channel MOSFET 100 V, 8-Pin PowerPAK 1212-8 SI7113DN-T1-GE3
- Vishay SIS Type N-Channel MOSFET 60 V Enhancement, 8-Pin 1212-8 SIS4634LDN-T1-GE3
- Vishay SISS Type N-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8 SISS4410DN-T1-GE3
- Vishay SIS9446DN 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin 1212-8 SIS9446DN-T1-GE3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8