Vishay SIRS Type N-Channel MOSFET, 225 A, 100 V Enhancement, 8-Pin SO-8 SIRS5100DP-T1-GE3

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Subtotal (1 pack of 2 units)*

$14.98

(exc. GST)

$16.48

(inc. GST)

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In Stock
  • Plus 2,988 unit(s) shipping from 03 June 2026
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Units
Per unit
Per Pack*
2 - 48$7.49$14.98
50 - 98$5.62$11.24
100 - 248$4.98$9.96
250 - 998$4.865$9.73
1000 +$4.785$9.57

*price indicative

Packaging Options:
RS Stock No.:
279-9971
Mfr. Part No.:
SIRS5100DP-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

225A

Maximum Drain Source Voltage Vds

100V

Series

SIRS

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0025Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

240W

Typical Gate Charge Qg @ Vgs

102nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

RoHS

Automotive Standard

No

The Vishay MOSFET is a N-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

Fully lead (Pb)-free device

Very low RDS x Qg figure of merit

100 percent Rg and UIS tested

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