Infineon OptiMOS Type N-Channel MOSFET, 142 A, 30 V Enhancement, 8-Pin PG-TSDSON-8FL
- RS Stock No.:
- 273-5246
- Mfr. Part No.:
- BSZ0901NSIATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
$9.65
(exc. GST)
$10.60
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 95 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | $1.93 | $9.65 |
| 50 - 495 | $1.608 | $8.04 |
| 500 - 995 | $1.382 | $6.91 |
| 1000 - 2495 | $1.356 | $6.78 |
| 2500 + | $1.332 | $6.66 |
*price indicative
- RS Stock No.:
- 273-5246
- Mfr. Part No.:
- BSZ0901NSIATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 142A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | PG-TSDSON-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 142A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type PG-TSDSON-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET is a N channel power MOSFET. This MOSFET has an integrated monolithic schottky like diode. It is qualified according to JEDEC for target applications and it is 100 percent avalanche tested. Optimized SyncFET for high performance buck converter.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
Related links
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL BSZ0901NSIATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL BSZ0902NSATMA1
- Infineon N-Channel MOSFET 30 V, 8-Pin PG-TSDSON-8 FL ISZ019N03L5SATMA1
- Infineon N-Channel MOSFET 30 V PG-TSDSON-8-FL BSZ019N03LSATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ75DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ56DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 60 V, 8-Pin PG-TSDSON-8 FL ISZ810P06LMATMA1
