Infineon HEXFET N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

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Subtotal (1 pack of 10 units)*

$11.19

(exc. GST)

$12.31

(inc. GST)

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Units
Per unit
Per Pack*
10 - 40$1.119$11.19
50 - 90$0.995$9.95
100 - 240$0.892$8.92
250 - 990$0.876$8.76
1000 +$0.813$8.13

*price indicative

Packaging Options:
RS Stock No.:
262-6776
Distrelec Article No.:
304-41-680
Mfr. Part No.:
IRFU3910PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-251

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

52W

Typical Gate Charge Qg @ Vgs

29.3nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

6.22mm

Length

6.73mm

Height

2.39mm

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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