Infineon HEXFET Type N-Channel MOSFET, 16 A, 100 V Enhancement, 3-Pin TO-251 IRFU3910PBF

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$9.17

(exc. GST)

$10.09

(inc. GST)

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  • 40 unit(s) ready to ship from another location
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Per Pack*
10 - 40$0.917$9.17
50 - 90$0.816$8.16
100 - 240$0.732$7.32
250 - 990$0.719$7.19
1000 +$0.667$6.67

*price indicative

Packaging Options:
RS Stock No.:
262-6776
Distrelec Article No.:
304-41-680
Mfr. Part No.:
IRFU3910PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

16A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-251

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

29.3nC

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

6.73mm

Height

2.39mm

Width

6.22 mm

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. It has ultra low on-resistance. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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