Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252 IRFR9024NTRLPBF

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Subtotal (1 pack of 25 units)*

$29.90

(exc. GST)

$32.90

(inc. GST)

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Units
Per unit
Per Pack*
25 - 25$1.196$29.90
50 - 75$1.171$29.28
100 - 225$1.076$26.90
250 - 975$1.056$26.40
1000 +$0.978$24.45

*price indicative

Packaging Options:
RS Stock No.:
262-6770
Mfr. Part No.:
IRFR9024NTRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-11A

Maximum Drain Source Voltage Vds

-55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

175mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

38W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

12.7nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Distrelec Product Id

304-41-678

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

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