Infineon HEXFET Type P-Channel MOSFET, -11 A, -55 V Enhancement, 3-Pin TO-252 IRFR9024NTRLPBF
- RS Stock No.:
- 262-6770
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
$29.90
(exc. GST)
$32.90
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 23 March 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | $1.196 | $29.90 |
| 50 - 75 | $1.171 | $29.28 |
| 100 - 225 | $1.076 | $26.90 |
| 250 - 975 | $1.056 | $26.40 |
| 1000 + | $0.978 | $24.45 |
*price indicative
- RS Stock No.:
- 262-6770
- Mfr. Part No.:
- IRFR9024NTRLPBF
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -11A | |
| Maximum Drain Source Voltage Vds | -55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 38W | |
| Typical Gate Charge Qg @ Vgs | 12.7nC | |
| Forward Voltage Vf | -1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Distrelec Product Id | 304-41-678 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -11A | ||
Maximum Drain Source Voltage Vds -55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 38W | ||
Typical Gate Charge Qg @ Vgs 12.7nC | ||
Forward Voltage Vf -1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Distrelec Product Id 304-41-678 | ||
Automotive Standard No | ||
The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. It provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Fully avalanche rated
Fast switching
Related links
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