MPN

Infineon HEXFET N-Channel MOSFET, 5.1 A, 55 V Enhancement, 4-Pin SOT-223 IRFL024ZTRPBF

RS Stock No.:: 262-6765
Mfr. Part No.:: IRFL024ZTRPBF
Brand:: Infineon

Infineon HEXFET N-Channel MOSFET, 5.1 A, 55 V Enhancement, 4-Pin SOT-223 IRFL024ZTRPBF

This image is representative of the product range

Subtotal (1 reel of 2500 units)*

$1,022.50

(exc. GST)

$1,125.00

(inc. GST)

FREE delivery for orders over $80.00 ex GST

Temporarily out of stock

2,500 unit(s) shipping from 04 March 2027

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 +	$0.409	$1,022.50

*price indicative

RS Stock No.:: 262-6765
Mfr. Part No.:: IRFL024ZTRPBF
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	5.1A
	Maximum Drain Source Voltage Vds	55V
	Package Type	SOT-223
	Series	HEXFET
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.075Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 5.1A
	Maximum Drain Source Voltage Vds 55V
	Package Type SOT-223
	Series HEXFET
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.075Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRFL024ZTRPBF

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has additional features such as 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.

Ultra low on-resistance

Repetitive avalanche allowed up to Tjmax