STMicroelectronics Type N-Channel MOSFET, 64 A, 650 V, 3-Pin ACEPACK SMIT
- RS Stock No.:
- 261-5481P
- Mfr. Part No.:
- SH68N65DM6AG
- Brand:
- STMicroelectronics
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Subtotal 10 units (supplied on a continuous strip)*
$523.50
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$575.80
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In Stock
- 185 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 10 - 24 | $52.35 |
| 25 - 49 | $49.72 |
| 50 - 99 | $47.25 |
| 100 + | $44.89 |
*price indicative
- RS Stock No.:
- 261-5481P
- Mfr. Part No.:
- SH68N65DM6AG
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ACEPACK SMIT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 116nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ACEPACK SMIT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 116nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The STMicroelectronics combination of two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. The DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
Half bridge power module
650 V blocking voltage
Fast recovery body diode
Very low switching energies
Low package inductance