Infineon CoolMOSTM 800V Type N-Channel MOSFET, 8 A, 800 V, 3-Pin PG-TO220-3
- RS Stock No.:
- 259-1577P
- Mfr. Part No.:
- SPP08N80C3XKSA1
- Brand:
- Infineon
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In Stock
- 298 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 10 - 18 | $3.85 |
| 20 - 98 | $3.775 |
| 100 - 498 | $3.105 |
| 500 + | $2.54 |
*price indicative
- RS Stock No.:
- 259-1577P
- Mfr. Part No.:
- SPP08N80C3XKSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOSTM 800V | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.5Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 104W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC1, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOSTM 800V | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.5Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 104W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC1, RoHS | ||
Automotive Standard No | ||
The Infineon coolmostm power transistor it is switching application this is industrial application with high DC bulk voltage. It is qualified according to JEDEC1 for target applications.
Extreme dv/dt rated
High peak current capability
Ultra low gate charge
Ultra low effective capacitances