Infineon IPL MOSFET, 14 A, 650 V TDSON IPLK60R600PFD7ATMA1
- RS Stock No.:
- 258-3889
- Mfr. Part No.:
- IPLK60R600PFD7ATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
$5.27
(exc. GST)
$5.796
(inc. GST)
FREE delivery for orders over $60.00 ex GST
In Stock
- 5,000 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | $2.635 | $5.27 |
| 10 - 98 | $2.345 | $4.69 |
| 100 - 248 | $1.875 | $3.75 |
| 250 - 498 | $1.84 | $3.68 |
| 500 + | $1.545 | $3.09 |
*price indicative
- RS Stock No.:
- 258-3889
- Mfr. Part No.:
- IPLK60R600PFD7ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TDSON | |
| Series | IPL | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TDSON | ||
Series IPL | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The super junction MOSFET in a ThinPAK 5x6 package features RDS(on) of 600mOhm leading to low switching losses. This package is characterized by a very small footprint of 5x6mm² and a very low profile with a height of 1mm. Together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. The CoolMOS PFD7 products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer.
Very low FOM RDS(on) x Eoss
Integrated robust fast body diode
Up to 2kV ESD protection
Wide range of RDS(on) values
Minimized switching losses
Power density improvement compared to latest CoolMOS charger technology
Related links
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- Infineon CoolMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 IPW60R170CFD7XKSA1
