Infineon IPL Type N-Channel MOSFET, 24 A, 650 V N TDSON
- RS Stock No.:
- 258-3886
- Mfr. Part No.:
- IPLK60R360PFD7ATMA1
- Brand:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
$4,825.00
(exc. GST)
$5,310.00
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- Shipping from 06 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | $0.965 | $4,825.00 |
| 10000 - 10000 | $0.869 | $4,345.00 |
| 15000 + | $0.782 | $3,910.00 |
*price indicative
- RS Stock No.:
- 258-3886
- Mfr. Part No.:
- IPLK60R360PFD7ATMA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IPL | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 1.2V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IPL | ||
Package Type TDSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 1.2V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS PFD7 super junction MOSFET complements the CoolMOS 7 offering for consumer applications. The CoolMOS PFD7 super junction MOSFET in a ThinPAK 5x6 package features RDS(on) of 360mOhm leading to low switching losses. This package is characterized by a very small footprint of 5x6mm² and a very low profile with a height of 1mm. Together with its benchmark low parasitic, these features lead to significantly smaller form factors and help to boost power density. The CoolMOS PFD7 products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material for the customer.
Integrated robust fast body diode
Up to 2kV ESD protection
Excellent commutation ruggedness
Low EMI
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Related links
- Infineon MOSFET 650 V PG-TDSON-8 IPLK60R360PFD7ATMA1
- Infineon MOSFET 650 V PG-TO252-3 IPD60R360PFD7SAUMA1
- Infineon MOSFET 650 V PG-TDSON-8 IPLK60R600PFD7ATMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R125CFD7XTMA1
- Infineon N-Channel MOSFET 650 V, 7-Pin D2PAK IMBG65R107M1HXTMA1
- Infineon OptiMOS™ N-Channel MOSFET 25 V PG-TDSON-8-7 BSC010NE2LSIATMA1
- Infineon N-Channel MOSFET 100 V PG-TDSON-8 BSZ440N10NS3GATMA1
- Infineon N-Channel MOSFET 60 V PG-TDSON-8 BSC112N06LDATMA1
