Infineon iPB Type N-Channel MOSFET, 166 A, 100 V N, 7-Pin TO-263 IPB032N10N5ATMA1

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

$7.21

(exc. GST)

$7.93

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 1,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 9$7.21
10 - 99$6.12
100 - 249$4.99
250 - 499$4.25
500 +$3.87

*price indicative

Packaging Options:
RS Stock No.:
258-3791
Mfr. Part No.:
IPB032N10N5ATMA1
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

166A

Maximum Drain Source Voltage Vds

100V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

3.2mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

187W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

76nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 61249-2-21, RoHS

Automotive Standard

No

The Infineon OptiMOS 5 100V power MOSFET is especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Reduced switching and conduction losses

Less paralleling required

Increased power density

Low voltage overshoot

Related links