Vishay E Type N-Channel Power MOSFET, 24 A, 650 V, 3-Pin TO-263 SIHB24N65E-GE3

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Subtotal 10 units (supplied in a tube)*

$80.50

(exc. GST)

$88.60

(inc. GST)

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10 - 24$8.05
25 - 99$7.64
100 - 499$6.72
500 +$5.80

*price indicative

Packaging Options:
RS Stock No.:
256-7413P
Mfr. Part No.:
SIHB24N65E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

TO-263

Series

E

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.145Ω

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30V

Maximum Power Dissipation Pd

250W

Typical Gate Charge Qg @ Vgs

122nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Vishay Series E Power MOSFET, 650V Drain Source Voltage, 24A Continuous Drain Current - SIHB24N65E-GE3


This power MOSFET is a high-voltage N-channel switching device designed for surface-mount power conversion and control applications. It operates across a wide temperature range and is intended for use where elevated voltage handling, substantial continuous current and compact board mounting are required.

Features and Benefits:


• 650V drain rating enabling high-voltage switching applications
• 24A continuous drain current for substantial load handling
• Rds(on) 0.145Ω reduces conduction losses under load
• 250W maximum dissipation for high-power thermal capability
• Vf 1.2V forward drop minimises diode conduction losses
• Gate charge 122nC supports predictable switching performance

Applications


• Suitable for high-voltage power supplies and converters
• Ideal for industrial motor drive switching stages
• Used with LED drivers requiring high-voltage handling
• Can be used for power factor correction front-ends
• Suitable for inverter and UPS primary switching elements

What gate voltage limits should be observed during design?


The device must not be driven beyond a maximum gate-to-source voltage of 30V to prevent gate-oxide stress.

How does the thermal environment affect continuous current capability?


The specified continuous drain current assumes adequate thermal management

without sufficient heat-sinking or PCB thermal vias, effective current capability will be reduced before reaching the 250W dissipation limit.

What mounting method is required for PCB integration?


It is supplied in a TO-263 package intended for surface-mount assembly and should be soldered to a board pad layout that provides thermal conduction to the copper plane.

What ambient temperature extremes can the device tolerate in operation?


The device is rated to operate from -55°C up to +150°C allowing use in environments with wide temperature variation.

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