Vishay Si2329DS Type P-Channel MOSFET, -6 A, -8 V, 3-Pin SOT-23 SI2329DS-T1-GE3
- RS Stock No.:
- 256-7347
- Mfr. Part No.:
- SI2329DS-T1-GE3
- Brand:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
$18.90
(exc. GST)
$20.80
(inc. GST)
FREE delivery for orders over $60.00 ex GST
Temporarily out of stock
- 1,900 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | $0.756 | $18.90 |
| 50 - 75 | $0.74 | $18.50 |
| 100 - 225 | $0.565 | $14.13 |
| 250 - 975 | $0.553 | $13.83 |
| 1000 + | $0.342 | $8.55 |
*price indicative
- RS Stock No.:
- 256-7347
- Mfr. Part No.:
- SI2329DS-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6A | |
| Maximum Drain Source Voltage Vds | -8V | |
| Series | Si2329DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.12Ω | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Typical Gate Charge Qg @ Vgs | 19.3nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Height | 1.12mm | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6A | ||
Maximum Drain Source Voltage Vds -8V | ||
Series Si2329DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.12Ω | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Typical Gate Charge Qg @ Vgs 19.3nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Height 1.12mm | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Automotive Standard No | ||
The Vishay Semiconductor P-channel 8 V 6A (Tc) 2.5W (Tc) surface mount SOT-23-3 (TO-236) halogen-free according to IEC 61249-2-21 definition.
TrenchFET power mosfet
100 % Rg tested
Compliant to RoHS directive 2002/95/EC
Related links
- Vishay P-Channel MOSFET 8 V SOT-23 SI2329DS-T1-GE3
- Vishay P-Channel MOSFET 8 V, 3-Pin SOT-23 SI2305CDS-T1-GE3
- Vishay P-Channel MOSFET 30 V SOT-23 SI2393DS-T1-GE3
- Vishay P-Channel MOSFET 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
- Vishay P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2301CDS-T1-GE3
- Vishay P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2323DDS-T1-GE3
- Vishay P-Channel MOSFET 60 V, 3-Pin SOT-23 SI2309CDS-T1-GE3
- Vishay P-Channel MOSFET 20 V, 3-Pin SOT-23 SI2377EDS-T1-GE3
