Infineon BSP Type N-Channel MOSFET, 0.68 A, 100 V Enhancement, 3-Pin SOT-223 BSP316PH6327XTSA1

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$3.32

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$3.65

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Per Pack*
5 - 5$0.664$3.32
10 - 95$0.598$2.99
100 - 245$0.538$2.69
250 - 495$0.484$2.42
500 +$0.434$2.17

*price indicative

Packaging Options:
RS Stock No.:
250-0536
Mfr. Part No.:
BSP316PH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

0.68A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-223

Series

BSP

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Distrelec Product Id

304-40-496

Automotive Standard

AEC-Q101

The Infineon makes this SIPMOS, Small-Signal-Transistor P-Channel, Enhancement mode mosfet. The device is dv/dt rated, P-channel, Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

Vds is 100 V, RDS(on) 1.8 Ω and Id is 0.68 A

Maximum power dissipation is 360 mW

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