Infineon BSP N-Channel MOSFET, 120 mA, 40 V Depletion, 3-Pin SOT-223
- RS Stock No.:
- 250-0529
- Mfr. Part No.:
- BSP129H6906XTSA1
- Brand:
- Infineon
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$827.00
(exc. GST)
$910.00
(inc. GST)
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Last RS stock
- Final 4,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | $0.827 | $827.00 |
| 2000 - 2000 | $0.744 | $744.00 |
| 3000 + | $0.67 | $670.00 |
*price indicative
- RS Stock No.:
- 250-0529
- Mfr. Part No.:
- BSP129H6906XTSA1
- Brand:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 120mA | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SOT-223 | |
| Series | BSP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4mΩ | |
| Channel Mode | Depletion | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Maximum Power Dissipation Pd | 81W | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 120mA | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SOT-223 | ||
Series BSP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4mΩ | ||
Channel Mode Depletion | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Maximum Power Dissipation Pd 81W | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS® Series MOSFET, 280 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP129H6906XTSA1
This small-signal transistor is an effective solution for devices that require high voltage and surface mount capability. As a depletion mode N-channel MOSFET, it enables efficient operation in various electronic applications. With a maximum drain-source voltage of 240V and a continuous drain current capacity of 280mA, this product is well-suited for automation and automotive applications, making it a dependable choice for managing power in different electronic circuits.
Features & Benefits
• N-channel configuration supports efficient switching operations
• Depletion mode functionality ensures constant current performance
• High voltage ratings provide versatility in applications
• Low gate threshold voltage enhances system compatibility
• Surface mount design allows for space-efficient installations
• AEC-Q101 qualified, suitable for automotive usage
Applications
• Suitable for automotive control systems
• Can be used in power management circuits
• Consumer electronics for enhanced efficiency
How can proper installation be ensured for optimal performance?
Install the MOSFET on the PCB following specified mounting guidelines, ensuring correct thermal management for effective heat dissipation.
What should be considered for thermal management during operation?
Thermal resistance must be monitored, as the operational temperature ranges from -55°C to +150°C, requiring adequate PCB design to facilitate efficient heat conduction.
What type of gate drive is recommended for this product?
A gate voltage within the specified range of ±20V is essential for optimal switching characteristics, ensuring dependable operation across applications.
Can this MOSFET be utilised in high-speed switching applications?
Yes, it is designed to function effectively in high-speed switching scenarios, thanks to specified turn-on and turn-off delay times.
What should be noted regarding gate charge characteristics?
The total gate charge at 5V is approximately 3.8nC, optimising power efficiency during switching without placing excessive load on the driving circuits.
Related links
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