DiodesZetex Type N-Channel MOSFET, 60 V Enhancement, 8-Pin PowerDI5060-8 DMT6011LPDW-13

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 25 units)*

$31.25

(exc. GST)

$34.50

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 2,475 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
25 - 25$1.25$31.25
50 - 75$1.22$30.50
100 - 225$1.191$29.78
250 +$1.163$29.08

*price indicative

Packaging Options:
RS Stock No.:
246-7555
Mfr. Part No.:
DMT6011LPDW-13
Brand:
DiodesZetex
Find similar products by selecting one or more attributes.
Select all

Brand

DiodesZetex

Product Type

MOSFET

Channel Type

Type N

Maximum Drain Source Voltage Vds

60V

Package Type

PowerDI5060-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.022Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22.2nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI5060-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has working temperature range of -55°C to +150°C.

Maximum drain to source voltage is 20 V and maximum gate to source voltage is ±12 V It offers low on-resistance It has low gate threshold voltage It offers an ESD protected gate

Related links