Vishay N-Channel MOSFET, 130 A, 60 V Depletion, 8-Pin PowerPAK SO-8 SIR182LDP-T1-RE3

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Packaging Options:
RS Stock No.:
239-8642
Mfr. Part No.:
SIR182LDP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current (Id)

130 A

Maximum Drain Source Voltage (Vds)

60 V

Channel Mode

Depletion

Pin Count

8

Package Type

PowerPAK SO-8

Automotive Standard

AEC-Q101

Maximum Drain Source Resistance (Rds)

0.00315 Ω

Maximum Gate Source Voltage (Vgs)

20 V

Maximum Operating Temperature

125 °C

Maximum Power Dissipation (Pd)

83 W

Minimum Operating Temperature

-55 °C

Mount Type

Surface

Standards/Approvals

No

Typical Gate Charge (Qg) @ Vgs

56 nC

Width

5.15 mm

The Vishay TrenchFET® is Gen IV power N-Channel MOSFET which operates at 60 V. This MOSFET used for power supply, motor drive control and synchronous rectification.

Very low resistance

UIS tested

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