Vishay E N-Channel Power MOSFET, 48 A, 650 V Depletion, 8-Pin PowerPAK 10 x 12 SIHK045N60E-T1-GE3
- RS Stock No.:
- 239-8634P
- Mfr. Part No.:
- SIHK045N60E-T1-GE3
- Brand:
- Vishay
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- RS Stock No.:
- 239-8634P
- Mfr. Part No.:
- SIHK045N60E-T1-GE3
- Brand:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | E | |
| Package Type | PowerPAK 10 x 12 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.043Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 278W | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series E | ||
Package Type PowerPAK 10 x 12 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.043Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 278W | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Vishay Series E Power MOSFET, 650V Maximum Drain Source Voltage, 48A Maximum Continuous Drain Current - SIHK045N60E-T1-GE3
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion in demanding electronic systems. It offers elevated voltage capability and substantial current handling for use in surface-mounted designs where thermal and electrical performance are critical. The device complies with industry lead-free standards and meets automotive qualification for use in vehicle electronics.
Features and Benefits:
• 650V rating for high-voltage switching applications
• 48A continuous drain current for heavy load handling
• 0.043Ω low on-resistance to reduce conduction losses
• 278W power dissipation for improved thermal endurance
• 98nC typical gate charge for predictable switching behaviour
• 30V gate tolerance enabling robust drive margin
• 48A continuous drain current for heavy load handling
• 0.043Ω low on-resistance to reduce conduction losses
• 278W power dissipation for improved thermal endurance
• 98nC typical gate charge for predictable switching behaviour
• 30V gate tolerance enabling robust drive margin
Applications
• Suitable for offline power supplies requiring high blocking voltage
• Ideal for automotive power management and motor drive circuits
• Used with DC-DC converters in industrial equipment
• Can be used for inverter stages in renewable-energy systems
• Suitable for compact surface-mount power modules
• Ideal for automotive power management and motor drive circuits
• Used with DC-DC converters in industrial equipment
• Can be used for inverter stages in renewable-energy systems
• Suitable for compact surface-mount power modules
What thermal extremes can the device tolerate in operation?
It operates across a wide temperature span from -55°C up to +150°C, suitable for harsh ambient conditions.
How is the device packaged for PCB assembly?
It is supplied in a low-profile PowerPAK10x12 surface-mount package optimised for heat dissipation and automated placement.
What gate drive limitations should designers observe?
The gate must be driven within ±30V to avoid gate-source overstress during switching events.
Does the device suit automotive qualification requirements?
It meets AEC‑Q101 automotive standards, making it appropriate for vehicle electronic subsystems.