Infineon OptiMOS™ Type N-Channel MOSFET, 479 A, 25 V, 8-Pin TDSON BSC004NE2LS5ATMA1

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Subtotal (1 reel of 5000 units)*

$7,630.00

(exc. GST)

$8,395.00

(inc. GST)

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Units
Per unit
Per Reel*
5000 - 5000$1.526$7,630.00
10000 - 10000$1.467$7,335.00
15000 +$1.449$7,245.00

*price indicative

RS Stock No.:
236-3639
Mfr. Part No.:
BSC004NE2LS5ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

479A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS™

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.45mΩ

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

135nC

Maximum Power Dissipation Pd

188W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Length

5.49mm

Standards/Approvals

No

Width

6.35 mm

Height

1.1mm

Automotive Standard

No

The Infineon OptiMOS power MOSFET offers Benchmark solutions by enabling highest power density and energy efficiency, both in stand by and full operation. It offers drain source on-state resistance of 0.45 m Ohm.

Highest efficiency

Highest power density in SuperSO8 package

Reduction of overall system costs

RoHS compliant

Halogen free

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