STMicroelectronics STH200 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK-2 STH200N10WF7-2
- RS Stock No.:
- 234-8896P
- Mfr. Part No.:
- STH200N10WF7-2
- Brand:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
$105.10
(exc. GST)
$115.60
(inc. GST)
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Units | Per unit |
|---|---|
| 10 - 99 | $10.51 |
| 100 - 249 | $10.31 |
| 250 - 499 | $10.10 |
| 500 + | $9.90 |
*price indicative
- RS Stock No.:
- 234-8896P
- Mfr. Part No.:
- STH200N10WF7-2
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | H2PAK-2 | |
| Series | STH200 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 93nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type H2PAK-2 | ||
Series STH200 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 93nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics N-channel power MOSFET utilizes the STripFET F7 technology with an enhanced trench gate structure boosting linear mode withstanding capability and providing a wider SOA combined with a very low on-state resistance. The resulting MOSFET ensures the best trade-off between linear mode and switching operations.
Best-in-class SOA capability
High current surge capability
Extremely low on-resistance