Vishay E Type N-Channel MOSFET, 32 A, 650 V Enhancement, 4-Pin PowerPAK SiHH080N60E-T1-GE3

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Subtotal (1 pack of 2 units)*

$16.23

(exc. GST)

$17.852

(inc. GST)

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  • 2,944 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48$8.115$16.23
50 - 98$7.875$15.75
100 - 248$7.63$15.26
250 - 998$7.41$14.82
1000 +$7.195$14.39

*price indicative

Packaging Options:
RS Stock No.:
228-2873
Mfr. Part No.:
SiHH080N60E-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

32A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

PowerPAK

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

184W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

42nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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