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Infineon IPD50R N-Channel MOSFET, 29 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R065C7AUMA1

RS Stock No.:: 222-4909
Mfr. Part No.:: IPL60R065C7AUMA1
Brand:: Infineon

Infineon IPD50R N-Channel MOSFET, 29 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R065C7AUMA1

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Subtotal (1 pack of 2 units)*

$26.09

(exc. GST)

$28.70

(inc. GST)

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Units	Per unit	Per Pack*
2 - 8	$13.045	$26.09
10 - 98	$12.81	$25.62
100 - 248	$12.565	$25.13
250 - 498	$12.33	$24.66
500 +	$12.095	$24.19

*price indicative

RS Stock No.:: 222-4909
Mfr. Part No.:: IPL60R065C7AUMA1
Brand:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	29A
	Maximum Drain Source Voltage Vds	600V
	Package Type	ThinPAK
	Series	IPD50R
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	180W
	Typical Gate Charge Qg @ Vgs	68nC
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	900mV
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	8.1mm
	Width	8.1mm
	Height	1.1mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 29A
	Maximum Drain Source Voltage Vds 600V
	Package Type ThinPAK
	Series IPD50R
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 180W
	Typical Gate Charge Qg @ Vgs 68nC
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 900mV
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 8.1mm
	Width 8.1mm
	Height 1.1mm
	Automotive Standard No

Datasheet - IPL60R065C7AUMA1

The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.

Reduced switching loss parameters such as Q G, C oss, E oss

Best-in-class figure of merit Q G*R DS(on)

Increased switching frequency

Best R (on)*A in the world

Rugged body diode