Infineon IPB65R Type N-Channel MOSFET, 18 A, 600 V Enhancement, 3-Pin TO-263 IPB60R180P7ATMA1

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Subtotal (1 pack of 5 units)*

$18.18

(exc. GST)

$20.00

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5$3.636$18.18
10 - 95$3.57$17.85
100 - 245$3.508$17.54
250 - 495$3.444$17.22
500 +$3.382$16.91

*price indicative

Packaging Options:
RS Stock No.:
222-4895
Mfr. Part No.:
IPB60R180P7ATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-263

Series

IPB65R

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

180mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor R G

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

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