Infineon IMBF1 Type N-Channel MOSFET, 5.2 A, 1700 V Enhancement, 7-Pin TO-263 IMBF170R1K0M1XTMA1

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Subtotal (1 pack of 2 units)*

$15.92

(exc. GST)

$17.52

(inc. GST)

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Units
Per unit
Per Pack*
2 - 8$7.96$15.92
10 - 98$7.82$15.64
100 - 248$7.68$15.36
250 - 498$7.545$15.09
500 +$7.41$14.82

*price indicative

Packaging Options:
RS Stock No.:
222-4849
Mfr. Part No.:
IMBF170R1K0M1XTMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

1700V

Series

IMBF1

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

1Ω

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon CoolSiC™ 1700 V, 1000 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.

Optimized for fly-back topologies

Extremely low switching loss

12 V / 0 V gate-source voltage compatible with fly-back controllers

Fully controllable dV/dt for EMI optimization

SMD package with enhanced creepage and clearance distances, > 7 mm

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