Silicon N-Channel MOSFET, 11.4 A, 600 V, 3-Pin TO 263 Infineon IPB65R310CFDAATMA1

RS Stock No.:: 222-4659
Mfr. Part No.:: IPB65R310CFDAATMA1
Brand:: Infineon

Silicon N-Channel MOSFET, 11.4 A, 600 V, 3-Pin TO 263 Infineon IPB65R310CFDAATMA1

Available for back order.

Price (ex. GST) Each (On a Reel of 1000)

$2.532

(exc. GST)

$2.785

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$2.532	$2,532.00
5000 +	$2.279	$2,279.00

*price indicative

RS Stock No.:: 222-4659
Mfr. Part No.:: IPB65R310CFDAATMA1
Brand:: Infineon

Technical data sheets

Datasheet - IPB65R310CFDAATMA1

Legislation and Compliance

Product Details

The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².

AEC Q101 qualified

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	11.4 A
Maximum Drain Source Voltage	600 V
Package Type	TO 263
Series	CoolMOS™
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.31 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Transistor Material	Silicon
Number of Elements per Chip	1

Silicon N-Channel MOSFET, 11.4 A, 600 V, 3-Pin TO 263 Infineon IPB65R310CFDAATMA1

Technical data sheets

Legislation and Compliance

Product Details

Specifications

Related links