Infineon CoolMOS Type N-Channel MOSFET & Diode, 97 A, 650 V Enhancement, 5-Pin VSON

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Subtotal (1 reel of 3000 units)*

$10,011.00

(exc. GST)

$11,013.00

(inc. GST)

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  • 6,000 unit(s) shipping from 20 August 2026
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Units
Per unit
Per Reel*
3000 - 12000$3.337$10,011.00
15000 +$3.042$9,126.00

*price indicative

RS Stock No.:
220-7430
Mfr. Part No.:
IPL60R095CFD7AUMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

97A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

VSON

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

65mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

147W

Typical Gate Charge Qg @ Vgs

51nC

Maximum Operating Temperature

150°C

Length

8.1mm

Height

1.1mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V Cool MOS CFD7 is Infineon’s latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS 7 series. Cool MOS CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Ultra-fast body diode

Best-in-class reverse recovery charge (Qrr)

Improved reverse diode dv/dt and dif/dt ruggedness

Lowest FOM RDS(on) x Qg and Eoss

Best-in-class RDS(on)/package combinations

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions

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