N-Channel MOSFET Transistor & Diode, 80 A, 100 V, 3-Pin D2PAK Infineon IPB065N10N3GATMA1

RS Stock No.:: 220-7381
Mfr. Part No.:: IPB065N10N3GATMA1
Brand:: Infineon

N-Channel MOSFET Transistor & Diode, 80 A, 100 V, 3-Pin D2PAK Infineon IPB065N10N3GATMA1

Available for back order.

Price (ex. GST) Each (On a Reel of 1000)

$3.12

(exc. GST)

$3.43

(inc. GST)

Units	Per unit	Per Reel*
1000 - 4000	$3.12	$3,120.00
5000 +	$2.808	$2,808.00

*price indicative

RS Stock No.:: 220-7381
Mfr. Part No.:: IPB065N10N3GATMA1
Brand:: Infineon

Technical data sheets

Datasheet - IPB065N10N3GATMA1

Legislation and Compliance

Product Details

The Infineon 100V OptiMOS power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and figure of merit.

Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	0.0065 O
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Number of Elements per Chip	1

N-Channel MOSFET Transistor & Diode, 80 A, 100 V, 3-Pin D2PAK Infineon IPB065N10N3GATMA1

Technical data sheets

Legislation and Compliance

Product Details

Specifications

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