Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PDFN56 TSM250NB06DCR

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Subtotal (1 pack of 25 units)*

$83.20

(exc. GST)

$91.525

(inc. GST)

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Last RS stock
  • Final 6,650 unit(s), ready to ship from another location
Units
Per unit
Per Pack*
25 - 600$3.328$83.20
625 - 1225$3.248$81.20
1250 +$3.171$79.28

*price indicative

Packaging Options:
RS Stock No.:
216-9706
Mfr. Part No.:
TSM250NB06DCR
Brand:
Taiwan Semiconductor
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Brand

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

60V

Package Type

PDFN56

Series

TSM025

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

48W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

6.1mm

Standards/Approvals

IEC 61249-2-21, RoHS

Width

5.1 mm

Height

1.1mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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