N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-247 Infineon IPW60R125CFD7XKSA1
- RS Stock No.:
- 214-9115
- Mfr. Part No.:
- IPW60R125CFD7XKSA1
- Brand:
- Infineon
205 In Global stock for delivery within 10 working day(s)
Price (ex. GST) Each (In a Pack of 5)
$8.332
(exc. GST)
$9.165
(inc. GST)
Units | Per unit | Per Pack* |
---|---|---|
5 - 5 | $8.332 | $41.66 |
10 - 10 | $8.126 | $40.63 |
15 + | $8.00 | $40.00 |
*price indicative
- RS Stock No.:
- 214-9115
- Mfr. Part No.:
- IPW60R125CFD7XKSA1
- Brand:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications such as phase-shift full-bridge (ZVS) and LLC. The CoolMOS CFD7 technology meets highest efficiency and reliability standards and furthermore supports high power density solutions. Altogether, CoolMOS CFD7 makes resonant switching topologies more efficient, more reliable, lighter and cooler.
Ultra-fast body diode
Low gate charge
Low gate charge
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 18 A |
Maximum Drain Source Voltage | 600 V |
Series | CoolMOS™ CFD7 |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 0.125 O |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.5V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
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