Infineon HEXFET N-Channel MOSFET, 82 A, 75 V, 3-Pin TO-263

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Subtotal 200 units (supplied on a reel)*

$545.20

(exc. GST)

$599.80

(inc. GST)

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Units
Per unit
200 - 390$2.726
400 +$2.683

*price indicative

Packaging Options:
RS Stock No.:
214-4444P
Mfr. Part No.:
IRF2807STRLPBF
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

160nC

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

This Infineon HEXFET Power MOSFET utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides reliable and efficient device

It is fully avalanche rated

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