Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 10 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R365P7AUMA1

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Subtotal (1 pack of 10 units)*

$19.11

(exc. GST)

$21.02

(inc. GST)

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10 - 740$1.911$19.11
750 - 1490$1.863$18.63
1500 +$1.835$18.35

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Packaging Options:
RS Stock No.:
214-4400
Mfr. Part No.:
IPL60R365P7AUMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10A

Maximum Drain Source Voltage Vds

600V

Package Type

ThinPAK

Series

600V CoolMOS P7

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

365mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

46W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

13nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

8.1mm

Width

8.1 mm

Height

1.1mm

Automotive Standard

No

This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.

It has rugged body diode

Integrated RG reduces MOSFET oscillation sensitivity

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