Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1

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Subtotal (1 pack of 15 units)*

$23.52

(exc. GST)

$25.875

(inc. GST)

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  • 4,980 unit(s) ready to ship from another location
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Units
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Per Pack*
15 - 615$1.568$23.52
630 - 1230$1.529$22.94
1245 +$1.505$22.58

*price indicative

Packaging Options:
RS Stock No.:
214-4396
Mfr. Part No.:
IPD80R1K4CEATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

CoolMOS CE

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

23nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

63W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Width

6.42 mm

Standards/Approvals

No

Height

2.35mm

Length

6.65mm

Automotive Standard

No

This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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