Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

$270.00

(exc. GST)

$300.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000$0.09$270.00
6000 - 9000$0.089$267.00
12000 +$0.087$261.00

*price indicative

RS Stock No.:
214-4336
Mfr. Part No.:
BSS7728NH6327XTSA2
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

0.36W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

1nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

1.4 mm

Length

3.04mm

Height

1.12mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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