STMicroelectronics SCTWA90N65G2V-4 Type N-Channel MOSFET, 119 A, 650 V Enhancement, 4-Pin Hip-247
- RS Stock No.:
- 213-3945P
- Mfr. Part No.:
- SCTWA90N65G2V-4
- Brand:
- STMicroelectronics
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$470.56
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$517.60
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- Shipping from 03 February 2027
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Units | Per unit |
|---|---|
| 8 - 14 | $58.82 |
| 15 + | $57.27 |
*price indicative
- RS Stock No.:
- 213-3945P
- Mfr. Part No.:
- SCTWA90N65G2V-4
- Brand:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Hip-247 | |
| Series | SCTWA90N65G2V-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 157nC | |
| Maximum Power Dissipation Pd | 656W | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Hip-247 | ||
Series SCTWA90N65G2V-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.5V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 157nC | ||
Maximum Power Dissipation Pd 656W | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance per unit area and very good switching performance.
High speed switching performance
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency