Vishay SiDR170DP Type N-Channel MOSFET, 95 A, 100 V Enhancement, 8-Pin SO-8

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RS Stock No.:
210-4954
Mfr. Part No.:
SiDR170DP-T1-RE3
Brand:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

95A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

SiDR170DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

93nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

150°C

Width

4.9 mm

Height

0.51mm

Length

5.9mm

Standards/Approvals

No

Automotive Standard

No

The Vishay N-Channel 100 V (D-S) MOSFET has PowerPAK SO-8DC package type.

TrenchFET Gen IV power MOSFET

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

100 % Rg and UIS tested

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