SiC N-Channel MOSFET Module, 33 A, 1200 V Depletion, 7-Pin H2PAK-7 STMicroelectronics SCTW100N65G2AG
- RS Stock No.:
- 202-5486
- Mfr. Part No.:
- SCTW100N65G2AG
- Brand:
- STMicroelectronics
Available for back order.
Price (ex. GST) Each
$59.90
(exc. GST)
$65.89
(inc. GST)
Units | Per unit |
|---|---|
| 1 - 7 | $59.90 |
| 8 - 14 | $58.39 |
| 15 + | $57.60 |
- RS Stock No.:
- 202-5486
- Mfr. Part No.:
- SCTW100N65G2AG
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Very fast and robust intrinsic body diode
Low capacitance
Low capacitance
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 1200 V |
| Series | SCT |
| Package Type | H2PAK-7 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 0.105 Ω |
| Channel Mode | Depletion |
| Maximum Gate Threshold Voltage | 5V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
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