SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H2PAK-7 STMicroelectronics SCTH90N65G2V-7
- RS Stock No.:
- 201-0869
- Mfr. Part No.:
- SCTH90N65G2V-7
- Brand:
- STMicroelectronics
On back order for despatch 31/03/2025, delivery within 10 working days from despatch date.
Added
Price (ex. GST) Each
$51.81
(exc. GST)
$56.99
(inc. GST)
| Units | Per unit |
| 1 + | $51.81 |
- RS Stock No.:
- 201-0869
- Mfr. Part No.:
- SCTH90N65G2V-7
- Brand:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very high operating junction temperature capability (TJ = 175 °C)
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
Very fast and robust intrinsic body diode
Extremely low gate charge and input capacitances
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 116 A |
| Maximum Drain Source Voltage | 650 V |
| Package Type | H2PAK-7 |
| Series | SCTH90 |
| Mounting Type | Surface Mount |
| Pin Count | 7 |
| Maximum Drain Source Resistance | 0.024 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Number of Elements per Chip | 1 |
| Transistor Material | SiC |
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